A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference
文献类型：期刊论文
| 作者 | Bill Ma; Fengqi Yu |
| 刊名 | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
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| 出版日期 | 2014 |
| 英文摘要 | This paper proposes a novel CMOS bandgap reference (BGR) with high-order curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism of the proposed curvature-compensation technique is analyzed thoroughly and the corresponding BGR circuit was implemented in standard CMOS 0.18 mu m technology. The experimental results show that the proposed BGR achieves 4.5 ppm/degrees C over the temperature range of -40 degrees C to 120 degrees C at 1.2 V supply voltage. It consumes only 36 mu A. In addition, it achieves line regulation performance of 0.054%/V. It is suitable for low- power applications requiring references with high precision. |
| 收录类别 | SCI |
| 原文出处 | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6693773&tag=1 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/5380]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS |
| 推荐引用方式 GB/T 7714 | Bill Ma,Fengqi Yu. A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,2014. |
| APA | Bill Ma,&Fengqi Yu.(2014).A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. |
| MLA | Bill Ma,et al."A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2014). |
入库方式： OAI收割
来源：深圳先进技术研究院
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