Absolute Pressure Sensor Based on Standard CMOS Process
文献类型：期刊论文
| 作者 | Yu Ting; Peng Benxian; Yu Fengqi |
| 刊名 | Advanced Materials Research
 |
| 出版日期 | 2014 |
| 英文摘要 | A CMOS compatible absolute pressure sensor with extend floating gate is developed with simple circuitry to realize high sensitivity, linearity, and manufacturability. The pressure sensitive membrane formation is based on the standard CMOS process with simple metal sacrificial layer removal step, which is very cost-efficient and fully CMOS compatible, enabling monolithic integration of circuitry. ANSYS and SPICE simulation results show that the proposed sensor can worked properly under 500K Pa, and the square sensing membrane of 100x100 μm 2 shows a good linearity over a pressure change ranging from 5 Pa to 500K Pa. |
| 收录类别 | EI |
| 原文出处 | http://www.scientific.net/AMR.875-877.2238 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/5381]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | Advanced Materials Research |
| 推荐引用方式 GB/T 7714 | Yu Ting,Peng Benxian,Yu Fengqi. Absolute Pressure Sensor Based on Standard CMOS Process[J]. Advanced Materials Research,2014. |
| APA | Yu Ting,Peng Benxian,&Yu Fengqi.(2014).Absolute Pressure Sensor Based on Standard CMOS Process.Advanced Materials Research. |
| MLA | Yu Ting,et al."Absolute Pressure Sensor Based on Standard CMOS Process".Advanced Materials Research (2014). |
入库方式： OAI收割
来源：深圳先进技术研究院
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