中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
SEU Reliability Evaluation of 3D ICs

文献类型:期刊论文

作者Huiyun Li; Xiaobo Hu; Cuiping Shao; Jianbin Zhou; Guoqing Xu
刊名Electronics Letters
出版日期2015
英文摘要The single-event-upset (SEU) reliability is a concern for three-dimensional (3D) integrated circuits (ICs), mainly due to the carrier mobility change caused by thermo-mechanical stress from through-silicon vias (TSVs) and the shallow trench isolation (STI). A systematic evaluation method is proposed to identify the vulnerability within 3D ICs at design time. The evaluation flow involves the TSV/STI stress-aware mobility variation calculation, sensitive region marking, insertion of excitation signals and then the simulation of the 3D ICs. This method is able to help 3D IC designers to evaluate and enhance the SEU reliability at design time.
收录类别SCI
原文出处http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=7042440&url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D7042440
语种英语
源URL[http://ir.siat.ac.cn:8080/handle/172644/6599]  
专题深圳先进技术研究院_集成所
作者单位Electronics Letters
推荐引用方式
GB/T 7714
Huiyun Li,Xiaobo Hu,Cuiping Shao,et al. SEU Reliability Evaluation of 3D ICs[J]. Electronics Letters,2015.
APA Huiyun Li,Xiaobo Hu,Cuiping Shao,Jianbin Zhou,&Guoqing Xu.(2015).SEU Reliability Evaluation of 3D ICs.Electronics Letters.
MLA Huiyun Li,et al."SEU Reliability Evaluation of 3D ICs".Electronics Letters (2015).

入库方式: OAI收割

来源:深圳先进技术研究院

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。