Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy
文献类型：期刊论文
| 作者 | Kun Chen; Xi Wan; Weiguang Xie; Jinxiu Wen; Zhiwen Kang; Xiaoliang Zeng; Huanjun Chen; Jianbin Xu |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2015 |
| 英文摘要 | Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions ofthe built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices. |
| 收录类别 | SCI |
| 原文出处 | http://onlinelibrary.wiley.com/doi/10.1002/adma.201502375/full |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/6663]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | ADVANCED MATERIALS |
| 推荐引用方式 GB/T 7714 | Kun Chen,Xi Wan,Weiguang Xie,et al. Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy[J]. ADVANCED MATERIALS,2015. |
| APA | Kun Chen.,Xi Wan.,Weiguang Xie.,Jinxiu Wen.,Zhiwen Kang.,...&Jianbin Xu.(2015).Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.ADVANCED MATERIALS. |
| MLA | Kun Chen,et al."Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy".ADVANCED MATERIALS (2015). |
入库方式： OAI收割
来源：深圳先进技术研究院
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