A novel process of silicon-on-nothing MOSFETs with double implantation
文献类型：会议论文
| 作者 | Benxian Peng ; Ting Yu ; Fengqi Yu |
| 出版日期 | 2007 |
| 会议名称 | Proceedings of the 2007 IEEE International Conference on Integration Technology |
| 会议地点 | Shenzhen, China |
| 英文摘要 | Silicon-on-Nothing (SON) device is expected to be obtained by double He+ implantation. The leakage currents of the SON MOSFET using twice energy implants are lower for 1~2 order of magnitude than that of using single energy implant simulated by ATLAS Simulator on electrical characteristic of SON MOSFETs. The selfheating effect in SON device can be suppressed by etchback sidewall of shallow trench insulation (STI). A theoretical simulation is proposed to calculate the ionimplantation distribution precisely |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/2037]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 推荐引用方式 GB/T 7714 | Benxian Peng,Ting Yu,Fengqi Yu. A novel process of silicon-on-nothing MOSFETs with double implantation[C]. 见:Proceedings of the 2007 IEEE International Conference on Integration Technology. Shenzhen, China. |
入库方式： OAI收割
来源：深圳先进技术研究院
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