A compact Force Sensor with Low Temperature Drift Design Using a Standard CMOS Process
文献类型：会议论文
| 作者 | Benxian Peng; Ting Yu; Fengqi Yu; Yuchun Feng |
| 出版日期 | 2010 |
| 会议名称 | 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 |
| 英文摘要 | In this paper, a novel compact structure design for minimizing the chip area cost is proposed. The improvement in sensitivity and temperature drift for silicon piezoresistive force sensor is evaluated. The sensitivity improvement can be obtained by adding a long flexible cantilever, and locating stress-sensitive element at a high stressed area close to the bottom surface of the lower cantilever. An ultra-thin Si film beneath interconnect layer can be obtained by a STI (shallow trench isolation) protection etch process. The simulation results show relative saturation drain current change of MOSFETs can achieve up to about 0.87% at 10g acceleration and the temperature fluctuations only 0.918 and 0.972 째C when it is exposed to -45 and 150 째C atmospheric temperatures, respectively |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/2774]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2010 |
| 推荐引用方式 GB/T 7714 | Benxian Peng,Ting Yu,Fengqi Yu,et al. A compact Force Sensor with Low Temperature Drift Design Using a Standard CMOS Process[C]. 见:5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. |
入库方式： OAI收割
来源：深圳先进技术研究院
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