A Novel Infrared Sensor Structure compatible to Standard CMOS Process
文献类型：会议论文
| 作者 | Yundong Wu; Rong Chen; Wenjian Jiang; Ting Yu; Fengqi Yu |
| 出版日期 | 2010 |
| 会议名称 | 2010 2nd International Conference on Modeling, Simulation, and Visualization Methods, WMSVM 2010, |
| 英文摘要 | This paper presents a new type of un-cooled thermal infrared sensor, which is compatible to standard CMOS process. The proposed infrared sensor adopts a suspended n-well containing several p+/n-well diodes as infrared sensing element. The thermal analysis indicates that the sensor exhibits excellent steady-state and transient thermal property. The theoretical analysis shows that the temperature coefficient is independent of temperature and process parameters, which is not true for conventional infrared sensors using single p-n diode. The simulation results based on SMIC 0.18關m CMOS process are consistent with theoretical ones. Compared to traditional p-n diode infrared sensor, the proposed structure is more suitable for constructing an infrared focal plane array (IRFPA) for imaging applications |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/2776]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2010 |
| 推荐引用方式 GB/T 7714 | Yundong Wu,Rong Chen,Wenjian Jiang,et al. A Novel Infrared Sensor Structure compatible to Standard CMOS Process[C]. 见:2010 2nd International Conference on Modeling, Simulation, and Visualization Methods, WMSVM 2010, . |
入库方式： OAI收割
来源：深圳先进技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。