Thermal Design and Analysis of Uncooled Infrared Senor in Standard CMOS
文献类型：会议论文
| 作者 | Rong Chen; Ting Yu; Yuchun Feng; Dasong Peng; Fengqi Yu |
| 出版日期 | 2010 |
| 会议名称 | 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 |
| 会议地点 | Xiamen, China |
| 英文摘要 | This paper presents the thermal design and analysis of uncooled infrared sensor fabricated in SMIC standard 0.18μm CMOS technology. The steady-state and transient thermal simulations have been done by finite-element methods (FEM). The effects of membrane parameters on thethermal performance of the infrared sensor are investigated. The simulation results show that the thermal time constant and temperature rise ofpixel are increasing with the size of absorbing layer increment, and the increment of width of polysilicon leads to the decrement of thermal time constant and temperature rise. In addition, to counterpoise these two thermal parameters, a group of the optimized thermally isolated membrane parameters is given. |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/2786]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2010 |
| 推荐引用方式 GB/T 7714 | Rong Chen,Ting Yu,Yuchun Feng,et al. Thermal Design and Analysis of Uncooled Infrared Senor in Standard CMOS[C]. 见:5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. Xiamen, China. |
入库方式： OAI收割
来源：深圳先进技术研究院
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