Modeling TSV Open Defects in 3D-Stacked DRAM
文献类型：会议论文
| 作者 | Li Jiang; Yuxi Liu; Lian Duan; Yuan Xie; Qiang Xu |
| 出版日期 | 2010 |
| 会议名称 | 41st International Test Conference, ITC 2010 |
| 英文摘要 | Three-dimensional (3D) stacking using through silicon vias (TSVs) is a promising solution to provide low-latency and high-bandwidth DRAM access from microprocessors. The large number of TSVs implemented in 3D DRAM circuits, however, are prone to open defects and coupling noises, leading to new test challenges. Through extensive simulation studies, this paper models the faulty behavior of TSV open defects occurred on the wordlines and the bitlines of 3D DRAM circuits, which serves as the first step for efficient and effective test and diagnosis solutions for such defects |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/2899]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2010 |
| 推荐引用方式 GB/T 7714 | Li Jiang,Yuxi Liu,Lian Duan,et al. Modeling TSV Open Defects in 3D-Stacked DRAM[C]. 见:41st International Test Conference, ITC 2010. |
入库方式： OAI收割
来源：深圳先进技术研究院
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