Properties of ferroelectric thin film capacitor for embedded passive applications
文献类型:会议论文
作者 | Ning Zhao; Lixi Wan; Shuhui Yu |
出版日期 | 2011 |
会议名称 | 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011 |
会议地点 | Shanghai, China |
英文摘要 | BaTiO3/Ba0.6Sr0.4TiO3/SrTiO3 (BT/B ST/ST, as one periodic structure) multilayer thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. Platinum electrodes were then patterned on the films by sputtering and lithographic process to form metal-ferroelectric-metal (MFM) capacitors. The multilayer thin films were crack free, compact and crystallized in perovskite structure. The crystallization temperature was between 600°C and 650°C. The dielectric constant of the multilayer films was significantly higher than that of individual uniform films of BaTiO3, SrTiO3 or Bao6Sro4TiO3 of similar thickness. The multilayer thin films showed excellent dielectric and electric properties that make them promising candidates for the dielectric layer of embedded capacitor in package substrate in a discrete format. Within the entire test range of frequencies, the capacitance of all samples remained at the level of several nF. The breakdown voltage of the MFM capacitors was measured to be greater than 27 V. |
收录类别 | EI |
语种 | 英语 |
源URL | [http://ir.siat.ac.cn:8080/handle/172644/3376] ![]() |
专题 | 深圳先进技术研究院_集成所 |
作者单位 | 2011 |
推荐引用方式 GB/T 7714 | Ning Zhao,Lixi Wan,Shuhui Yu. Properties of ferroelectric thin film capacitor for embedded passive applications[C]. 见:2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011. Shanghai, China. |
入库方式: OAI收割
来源:深圳先进技术研究院
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