中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Properties of ferroelectric thin film capacitor for embedded passive applications

文献类型:会议论文

作者Ning Zhao; Lixi Wan; Shuhui Yu
出版日期2011
会议名称2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011
会议地点Shanghai, China
英文摘要BaTiO3/Ba0.6Sr0.4TiO3/SrTiO3 (BT/B ST/ST, as one periodic structure) multilayer thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. Platinum electrodes were then patterned on the films by sputtering and lithographic process to form metal-ferroelectric-metal (MFM) capacitors. The multilayer thin films were crack free, compact and crystallized in perovskite structure. The crystallization temperature was between 600°C and 650°C. The dielectric constant of the multilayer films was significantly higher than that of individual uniform films of BaTiO3, SrTiO3 or Bao6Sro4TiO3 of similar thickness. The multilayer thin films showed excellent dielectric and electric properties that make them promising candidates for the dielectric layer of embedded capacitor in package substrate in a discrete format. Within the entire test range of frequencies, the capacitance of all samples remained at the level of several nF. The breakdown voltage of the MFM capacitors was measured to be greater than 27 V.
收录类别EI
语种英语
源URL[http://ir.siat.ac.cn:8080/handle/172644/3376]  
专题深圳先进技术研究院_集成所
作者单位2011
推荐引用方式
GB/T 7714
Ning Zhao,Lixi Wan,Shuhui Yu. Properties of ferroelectric thin film capacitor for embedded passive applications[C]. 见:2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011. Shanghai, China.

入库方式: OAI收割

来源:深圳先进技术研究院

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