High-dielectric-constant graphite oxide-polyimide composites as embedded 1
文献类型:会议论文
作者 | Siwang Kou; Shuhui Yu; Rong Sun; Ching Ping Wong |
出版日期 | 2012 |
会议名称 | 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) |
会议地点 | 台湾 |
英文摘要 | Microstructure and dielectric performance of graphite oxide (GO)/polyimide (PI) composites were investigated. Graphite oxide was prepared by hummer method[1] through which graphite ?akes were oxidized by concentrated sulfuric acid, potassium permanganate and hydrogen peroxide. Polyimide was synthesized with pyromellitic dianhydride (PMDA) and 4,4-diamino-diphenyl ether (ODA) in N,N-dimethylformamide (DMF) solution. GO/PI composite film was fabricated via coating process. The experimental results showed that the dielectric constant εr increased gradually with GO content before reaching the percolation threshold. The value of dielectric constant εr was 68 at 1000 Hz for the composite containing 1wt% of GO, which was 19 times larger than that of the pure PI. The dielectric loss tanδ was 0.6 for the composite containing 1 wt% GO. When the GO content reached 2 wt%, both of the εr and tanδ values increased substantially, indicating formation of conducting pathway between GO particles. The results implied that when GO content was at a low level, the insulating PI served as electrons barrier layer between GO and prevented electrons from transferring from one GO to another under an external field. As a result, the measured εr value increased with GO content, while the tanδ remained low. However, when GO filler loading reached a higher level and was in the vicinity of a critical concentration, GO was so close to each other and the conducting pathway could be developed in PI, leading to remarkable growth of εr and tanδ. |
收录类别 | EI |
语种 | 英语 |
源URL | [http://ir.siat.ac.cn:8080/handle/172644/3861] ![]() |
专题 | 深圳先进技术研究院_集成所 |
作者单位 | 2012 |
推荐引用方式 GB/T 7714 | Siwang Kou,Shuhui Yu,Rong Sun,et al. High-dielectric-constant graphite oxide-polyimide composites as embedded 1[C]. 见:7th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). 台湾. |
入库方式: OAI收割
来源:深圳先进技术研究院
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