Application of CVD graphene as transparent front electrode in Cu(In,Ga)Se2 solar cell
文献类型:会议论文
作者 | Ling Yin; Chunlei Yang; Kang Zhang; Hailin Luo; Xieqiu Zhang; Zhuang Liu; Guangming Cheng; Zhiyu Xiong; Xudong Xiao |
出版日期 | 2014 |
会议名称 | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
会议地点 | Denver, CO, United states |
英文摘要 | Graphene is a promising material to be used as transparent conducting electrode (TCE) due to its high optical transmittance and conductivity. In this work, we present a novel TCE structure for the Cu(In,Ga)Se2 (CIGS) solar cell in which a AuCl3 doped graphene film grown by chemical vapor deposition (CVD) with a thin layer of PMMA coating was used to replace the ZnO:Al (AZO) film. The Ni/Al/Ni metal grid was directly deposited on the intrinsic high resistivity ZnO (i-ZnO) buffer layer. And large area (~ 0.5 cm2) PMMA/graphene layer was transferred to contact both metal grid and i-ZnO. Our findings demonstrate that FF, Jsc and PCE will be improved when silver nanowires are present at the graphene/i-ZnO interface in the CIGS solar cell. To further increase the solar cell performance, the pattern of the metal grid was also simulated and optimized. |
收录类别 | EI |
语种 | 英语 |
源URL | [http://ir.siat.ac.cn:8080/handle/172644/5520] ![]() |
专题 | 深圳先进技术研究院_集成所 |
作者单位 | 2014 |
推荐引用方式 GB/T 7714 | Ling Yin,Chunlei Yang,Kang Zhang,et al. Application of CVD graphene as transparent front electrode in Cu(In,Ga)Se2 solar cell[C]. 见:40th IEEE Photovoltaic Specialist Conference, PVSC 2014. Denver, CO, United states. |
入库方式: OAI收割
来源:深圳先进技术研究院
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