中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Stochastic Wire-Length Model with TSV Placement on Periphery Area

文献类型:会议论文

作者Ling, Jianhui; Li, Huiyun; Xu, Guoqing; Xiong, Liying
出版日期2014
会议名称Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014
会议地点新加坡
英文摘要Despite of numerous advantages of three dimensional integrated circuits (3D-ICs), their commercial success remains limited. The reason lies, in part, on the lack of physical design tools about Through-Silicon-Vias (TSVs) and 3D die stacking. In this paper, we propose a novel TSV placement method on the periphery of the dies. Based on this method, we derive a novel mathematical model to estimate 3D-IC wire-length and area with TSVs before floor-planning. We analyze the impact of TSVs on silicon area and wire-length. A case study with ISCAS benchmark circuits demonstrates that the proposed TSV placement method reduces the chip area and alleviates the reliability issues.
收录类别EI
语种英语
源URL[http://ir.siat.ac.cn:8080/handle/172644/5561]  
专题深圳先进技术研究院_集成所
作者单位2014
推荐引用方式
GB/T 7714
Ling, Jianhui,Li, Huiyun,Xu, Guoqing,et al. Stochastic Wire-Length Model with TSV Placement on Periphery Area[C]. 见:Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. 新加坡.

入库方式: OAI收割

来源:深圳先进技术研究院

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