A Statistical Model to Predict Success Rate of Ion Fault Injection Attacks for Cryptographic Ics
文献类型：会议论文
| 作者 | Dai, Liang; Li, Huiyun; Xu, Guoqing; Xiong, Liying |
| 出版日期 | 2014 |
| 会议名称 | Proceedings - 2014 10th International Conference on Computational Intelligence and Security, CIS 2014 |
| 会议地点 | 中国 |
| 英文摘要 | Fault injection attacks have posed serious threat to cryptographic integrated circuits (crypto-ICs). Heavy ion is one of the most powerful fault injection source due to its high energy and focused beam sizes. However, the ion has to strike on the certain transistor at the exact time instances. We choose the certain transistor among tens of thousands of transistors on the chip. And we choose the exact time instances during the whole decryption period. Only this kind of hit can cause a successful ion fault attack on crypto-ICs. The success rate is niche and often highly relies on experiences. This paper proposes a prediction model considering the ion density, crypto-ICs and the cryptographic algorithms. The model helps to indicate the appropriate Poisson intensity and beam spot size to maximize the success rate, so as to ease the ion fault injection test. Experimental results prove the feasibility of our model. |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/5565]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2014 |
| 推荐引用方式 GB/T 7714 | Dai, Liang,Li, Huiyun,Xu, Guoqing,et al. A Statistical Model to Predict Success Rate of Ion Fault Injection Attacks for Cryptographic Ics[C]. 见:Proceedings - 2014 10th International Conference on Computational Intelligence and Security, CIS 2014. 中国. |
入库方式： OAI收割
来源：深圳先进技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。