O2 plasma treatment in polymer insulation process for through silicon vias
文献类型：会议论文
| 作者 | Zhuang, Lulu; Jiang, Kun; Zhang, Guoping; Tang, Jiaoning; Sun, Rong; Lee, S. W. Ricky |
| 出版日期 | 2014 |
| 会议名称 | Proceedings of the Electronic Packaging Technology Conference, EPTC, |
| 会议地点 | 中国 |
| 英文摘要 | Through silicon via (TSV) technology has been widely applied in CMOS image sensors (CIS). This paper reports the wetting behavior of polymer liquid in the TSV insulation process by spin coating. The O2 plasma treatment was used to increase the hydrophilicity of the substrate surface in order to reduce the adhesion between the polymer liquid and the via sidewall. This surface treatment was to ensure that the polymer liquid can enter the vias smoothly. Besides, the O2 plasma treatment to the wafer could also improve the wetting rate and decrease the balanced contact angle. During the course of the present study, different parameters of power and time of O2 plasma treatment were used to modify the wafer surface and the sidewall of vias. The optimal O2 plasma treatment condition was determined with the power of 160 W and the processing time of 25 s. It was confirmed that the method of O2 plasma treatment is beneficial to the wetting in the deposition process of the polymer insulation layer for TSVs. |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/5640]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2014 |
| 推荐引用方式 GB/T 7714 | Zhuang, Lulu,Jiang, Kun,Zhang, Guoping,et al. O2 plasma treatment in polymer insulation process for through silicon vias[C]. 见:Proceedings of the Electronic Packaging Technology Conference, EPTC,. 中国. |
入库方式： OAI收割
来源：深圳先进技术研究院
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