NOVEL PERIODIC MESOPOROUS ORGANOSILICA THIN FILM WITH LOW DIELECTRIC CONSTANT AND HIGH MECHANICAL PROPERTY
文献类型：会议论文
| 作者 | Jiawei Zhang; Guoping Zhang; Rong Sun; S. W. Ricky Lee; C. P. Wong |
| 出版日期 | 2016 |
| 会议名称 | China Semiconductor Technology International Conference 2016, CSTIC 2016 |
| 会议地点 | Shanghai, China |
| 英文摘要 | A novel organosilane precursor, (hexfluoropropane- 2,2-diyl)dibenzyl-bridged organosilane (HFPDBO) precursor, was prepared by a simple and facile synthesis. There are some superiorities designed in HFPDBO precursor, for instance, hexfluoro-substitutions and dibenzene can contribute to higher porosity and lower dielectric constant, rigid carbon bridged construction and tetrafunctional organosilane branches are beneficial to promoting polymerization and mechanical properties. Purified HFPDBO precursor were mixed with porogen Brij® L4, acid and ethanol for coating solution, and the HFPDBO-based PMO thin film was prepared via evaporation-induced self-assembly (EISA) method. The novel PMO thin film emerges excellent dielectric property (dielectric constants of 1.58@1 MHz) and high mechanical property (Young’s modulus of 5.54±0.11 GPa), besides it shows order structure and hydrophobic property. |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/10092]  |
| 专题 | 深圳先进技术研究院_集成所 |
| 作者单位 | 2016 |
| 推荐引用方式 GB/T 7714 | Jiawei Zhang,Guoping Zhang,Rong Sun,et al. NOVEL PERIODIC MESOPOROUS ORGANOSILICA THIN FILM WITH LOW DIELECTRIC CONSTANT AND HIGH MECHANICAL PROPERTY[C]. 见:China Semiconductor Technology International Conference 2016, CSTIC 2016. Shanghai, China. |
入库方式： OAI收割
来源：深圳先进技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。