High frequency resistance calculation and modeling of Through Silicon Vias
文献类型：会议论文
| 作者 | Yuanjun Liang; Ye Li |
| 出版日期 | 2010 |
| 会议名称 | 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010 |
| 英文摘要 | Through Silicon Via (TSV) is the primary interconnection technology in three dimensional integrated circuits (3DICs). The high frequency resistance of the TSV needs to be calculated and modeled. In this paper, the high resistance value is calculated by the simplify Bessel function, and increases proportionally to the square root of frequency, it is frequency dependent but not compatible to SPICE tools. A frequency independent three deep resistor and inductor ladder was proposed to model the frequency dependent resistance property of the TSV. The results denote that the model has high accuracy |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/3031]  |
| 专题 | 深圳先进技术研究院_医工所 |
| 作者单位 | 2010 |
| 推荐引用方式 GB/T 7714 | Yuanjun Liang,Ye Li. High frequency resistance calculation and modeling of Through Silicon Vias[C]. 见:2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. |
入库方式： OAI收割
来源：深圳先进技术研究院
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