Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon Vias
文献类型：期刊论文
| 作者 | Yuanjun Liang; Ye Li |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:3页码:393-395 |
| 英文摘要 | In this letter, closed-form expressions are proposed to calculate the parasitic resistance and inductance of different profiles of through-silicon vias (TSVs). The formulas for the tapered TSV are developed as the functions of the geometric parameters of the via. The expressions also cover the straight TSV when the slope wall angle is zero. The comparison between the formulas and numerical electromagnetic results shows that the formulas have high accuracy at low frequency, with maximum errors of 2% and 5% for the resistance and the inductance, respectively. The errors increase at high frequencies due to the skin effect and can be minimized by using fitting parameters. |
| 收录类别 | SCI |
| 原文出处 | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5706346&tag=1 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/3465]  |
| 专题 | 深圳先进技术研究院_医工所 |
| 作者单位 | IEEE ELECTRON DEVICE LETTERS |
| 推荐引用方式 GB/T 7714 | Yuanjun Liang,Ye Li. Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon Vias[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(3):393-395. |
| APA | Yuanjun Liang,&Ye Li.(2011).Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon Vias.IEEE ELECTRON DEVICE LETTERS,32(3),393-395. |
| MLA | Yuanjun Liang,et al."Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon Vias".IEEE ELECTRON DEVICE LETTERS 32.3(2011):393-395. |
入库方式： OAI收割
来源：深圳先进技术研究院
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