中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High pressure effect on electronic structure and thermoelectric properties of BiCuSeO: First-principles calculations

文献类型:期刊论文

作者Daifeng Zou; Yunya Liu; Shuhong Xie; Jianguo Lin; Hairong Zheng; Jiangyu Li
刊名RSC ADVANCES
出版日期2014
英文摘要The effects of high pressure on the electronic structure and thermoelectric properties of BiCuSeO have been investigated by using first-principles calculations and the semi-classical Boltzmann transport theory. The electronic band gap increases with increasing pressure, and the band structure near the Fermi level of BiCuSeO is modified by applying hydrostatic pressure. It is found that the electrical conductivity of BiCuSeO can be enhanced under pressure, and such dependence can be explained by the pressure-induced change of the electronic structure of BiCuSeO. Furthermore, the doping dependence of power factors of n- and p-type BiCuSeO at three different pressures are estimated, suggesting that n-type doping of this compound would be more favorable for improving the thermoelectric properties under external pressure.
收录类别SCI
原文出处http://pubs.rsc.org/en/content/articlepdf/2014/ra/c4ra10073e
语种英语
源URL[http://ir.siat.ac.cn:8080/handle/172644/5728]  
专题深圳先进技术研究院_医工所
作者单位RSC ADVANCES
推荐引用方式
GB/T 7714
Daifeng Zou,Yunya Liu,Shuhong Xie,et al. High pressure effect on electronic structure and thermoelectric properties of BiCuSeO: First-principles calculations[J]. RSC ADVANCES,2014.
APA Daifeng Zou,Yunya Liu,Shuhong Xie,Jianguo Lin,Hairong Zheng,&Jiangyu Li.(2014).High pressure effect on electronic structure and thermoelectric properties of BiCuSeO: First-principles calculations.RSC ADVANCES.
MLA Daifeng Zou,et al."High pressure effect on electronic structure and thermoelectric properties of BiCuSeO: First-principles calculations".RSC ADVANCES (2014).

入库方式: OAI收割

来源:深圳先进技术研究院

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