High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction
文献类型：期刊论文
| 作者 | Longxing Su; Quanlin Zhang; Tianzhun Wu; Mingming Chen; Yuquan Su; Yuan Zhu; Rong Xiang; Xuchun Gui; Zikang Tang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 英文摘要 | Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/5806]  |
| 专题 | 深圳先进技术研究院_医工所 |
| 作者单位 | APPLIED PHYSICS LETTERS |
| 推荐引用方式 GB/T 7714 | Longxing Su,Quanlin Zhang,Tianzhun Wu,et al. High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction[J]. APPLIED PHYSICS LETTERS,2014. |
| APA | Longxing Su.,Quanlin Zhang.,Tianzhun Wu.,Mingming Chen.,Yuquan Su.,...&Zikang Tang.(2014).High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction.APPLIED PHYSICS LETTERS. |
| MLA | Longxing Su,et al."High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction".APPLIED PHYSICS LETTERS (2014). |
入库方式： OAI收割
来源：深圳先进技术研究院
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