中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Well-controlled wet etching of ZnO films using hydrogen peroxide solution

文献类型:期刊论文

作者Yuchao Wang; Tianzhun Wu; Mingming Chen; Longxing Su; Quanlin Zhang; Lifang Yuan; Yuan Zhu; Zikang Tang
刊名APPLIED SURFACE SCIENCE
出版日期2014
英文摘要We propose hydrogen peroxide (H2O2) solution as a novel and promising etchant for ZnO thin film with well-controlled etching performances and enhanced ultraviolet (UV) luminescence, which is also facile, inexpensive and environmentally friendly. We have analyzed its etching mechanism and surface modification effect for ZnO. Using this etchant, fine patterns have been transferred to the ZnO single-crystal films with good fidelity. The etching performances have been comprehensively investigated using Raman spectroscopy, scanning electronic microscopy (SEM), atom force microscopy (AFM), surface profiler and photoluminescence (PL) spectrometer. The results have shown that ZnO films after the long-time etching exhibited linear etching rate, smooth profile and increased UV emission, which enables H2O2 solution as an excellent wet etchant for various ZnO-based optoelectronic devices. (C) 2013 Published by Elsevier B.V.
收录类别SCI
原文出处http://www.sciencedirect.com/science/article/pii/S0169433213021314
语种英语
源URL[http://ir.siat.ac.cn:8080/handle/172644/5811]  
专题深圳先进技术研究院_医工所
作者单位APPLIED SURFACE SCIENCE
推荐引用方式
GB/T 7714
Yuchao Wang,Tianzhun Wu,Mingming Chen,et al. Well-controlled wet etching of ZnO films using hydrogen peroxide solution[J]. APPLIED SURFACE SCIENCE,2014.
APA Yuchao Wang.,Tianzhun Wu.,Mingming Chen.,Longxing Su.,Quanlin Zhang.,...&Zikang Tang.(2014).Well-controlled wet etching of ZnO films using hydrogen peroxide solution.APPLIED SURFACE SCIENCE.
MLA Yuchao Wang,et al."Well-controlled wet etching of ZnO films using hydrogen peroxide solution".APPLIED SURFACE SCIENCE (2014).

入库方式: OAI收割

来源:深圳先进技术研究院

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