Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer
文献类型：期刊论文
| 作者 | Xiang Li ; Hong Wang ; Zhongliang Qiao ; Yu Zhang ; Zhichuan Niu ; Cunzhu Tong ; Chongyang Liu |
| 刊名 | ieee journal of selected topics in quantum electronics
 |
| 出版日期 | 2016 |
| 卷号 | 22期号:6 |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27996]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiang Li,Hong Wang,Zhongliang Qiao,et al. Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer[J]. ieee journal of selected topics in quantum electronics,2016,22(6). |
| APA | Xiang Li.,Hong Wang.,Zhongliang Qiao.,Yu Zhang.,Zhichuan Niu.,...&Chongyang Liu.(2016).Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer.ieee journal of selected topics in quantum electronics,22(6). |
| MLA | Xiang Li,et al."Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer".ieee journal of selected topics in quantum electronics 22.6(2016). |
入库方式： OAI收割
来源：半导体研究所
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