GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence
文献类型：期刊论文
| 作者 | Xiren Chen ; Junliang Xing ; Liangqing Zhu ; F.-X. Zha ; Zhichuan Niu ; Shaoling Guo ; Jun Shao |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2016 |
| 卷号 | 119期号:17页码:175301 |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27998]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiren Chen,Junliang Xing,Liangqing Zhu,et al. GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence[J]. journal of applied physics,2016,119(17):175301. |
| APA | Xiren Chen.,Junliang Xing.,Liangqing Zhu.,F.-X. Zha.,Zhichuan Niu.,...&Jun Shao.(2016).GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence.journal of applied physics,119(17),175301. |
| MLA | Xiren Chen,et al."GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence".journal of applied physics 119.17(2016):175301. |
入库方式： OAI收割
来源：半导体研究所
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