Short-wave infrared detector with double barrier structure and low dark current density
文献类型：期刊论文
| 作者 | Kangming Pei ; Zhongtao Qiao ; Jianhui Chen ; Fengqi Gao ; Baochen Li ; Zhichuan Niu |
| 刊名 | chinese optics letters
 |
| 出版日期 | 2016 |
| 卷号 | 14期号:2页码:022501 |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27825]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Kangming Pei,Zhongtao Qiao,Jianhui Chen,et al. Short-wave infrared detector with double barrier structure and low dark current density[J]. chinese optics letters,2016,14(2):022501. |
| APA | Kangming Pei,Zhongtao Qiao,Jianhui Chen,Fengqi Gao,Baochen Li,&Zhichuan Niu.(2016).Short-wave infrared detector with double barrier structure and low dark current density.chinese optics letters,14(2),022501. |
| MLA | Kangming Pei,et al."Short-wave infrared detector with double barrier structure and low dark current density".chinese optics letters 14.2(2016):022501. |
入库方式： OAI收割
来源：半导体研究所
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