Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm
文献类型：期刊论文
| 作者 | Dongwei Jiang ; Wei Xiang ; Fengyun Guo ; Hongyue Hao ; Xi Han ; Xiaochao Li ; Guowei Wang ; Yingqiang Xu ; Qingjiang Yu ; Zhichuan Niu |
| 刊名 | applied physics letters
 |
| 出版日期 | 2016 |
| 卷号 | 108期号:12页码:121110 |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27829]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Dongwei Jiang,Wei Xiang,Fengyun Guo,et al. Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm[J]. applied physics letters,2016,108(12):121110. |
| APA | Dongwei Jiang.,Wei Xiang.,Fengyun Guo.,Hongyue Hao.,Xi Han.,...&Zhichuan Niu.(2016).Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm.applied physics letters,108(12),121110. |
| MLA | Dongwei Jiang,et al."Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm".applied physics letters 108.12(2016):121110. |
入库方式： OAI收割
来源：半导体研究所
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