中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission

文献类型:期刊论文

作者Ke-Zhao Du ; Xingzhi Wang ; Jun Zhang ; Xinfeng Liu ; Christian Kloc ; Qihua Xiong
刊名optical engineering
出版日期2016
卷号56期号:1页码:011109
学科主题半导体物理
收录类别SCI
公开日期2017-03-16
源URL[http://ir.semi.ac.cn/handle/172111/28049]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Ke-Zhao Du,Xingzhi Wang,Jun Zhang,et al. CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission[J]. optical engineering,2016,56(1):011109.
APA Ke-Zhao Du,Xingzhi Wang,Jun Zhang,Xinfeng Liu,Christian Kloc,&Qihua Xiong.(2016).CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission.optical engineering,56(1),011109.
MLA Ke-Zhao Du,et al."CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission".optical engineering 56.1(2016):011109.

入库方式: OAI收割

来源:半导体研究所

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