Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Xuezhe Yu ; Lixia Li ; Hailong Wang ; Jiaxing Xiao ; Chao Shen ; Dong Pan ; Jianhua Zhao |
| 刊名 | nanoscale
 |
| 出版日期 | 2016 |
| 卷号 | 8页码:10615–10621 |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27939]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xuezhe Yu,Lixia Li,Hailong Wang,et al. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy[J]. nanoscale,2016,8:10615–10621. |
| APA | Xuezhe Yu.,Lixia Li.,Hailong Wang.,Jiaxing Xiao.,Chao Shen.,...&Jianhua Zhao.(2016).Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.nanoscale,8,10615–10621. |
| MLA | Xuezhe Yu,et al."Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy".nanoscale 8(2016):10615–10621. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。