中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

文献类型:期刊论文

作者Yao Nan ; Li Wei† ; Zhao Yihao ; Zhong Li ; Liu Suping ; Ma Xiaoyu
刊名spie proceedings
出版日期2016
卷号9671页码:96710h-3
学科主题半导体器件
收录类别SCI
公开日期2017-03-02
源URL[http://ir.semi.ac.cn/handle/172111/27672]  
专题半导体研究所_光电子器件国家工程中心
推荐引用方式
GB/T 7714
Yao Nan,Li Wei†,Zhao Yihao,et al. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress[J]. spie proceedings,2016,9671:96710h-3.
APA Yao Nan,Li Wei†,Zhao Yihao,Zhong Li,Liu Suping,&Ma Xiaoyu.(2016).Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress.spie proceedings,9671,96710h-3.
MLA Yao Nan,et al."Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress".spie proceedings 9671(2016):96710h-3.

入库方式: OAI收割

来源:半导体研究所

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