Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
文献类型：期刊论文
| 作者 | J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; J.P. Liu ; L.Q. Zhang ; H. Yang ; Y.T. Zhang ; G.T. Du |
| 刊名 | journal of alloys and compounds
 |
| 出版日期 | 2016 |
| 卷号 | 681页码:522-526 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27862]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | J. Yang,D.G. Zhao,D.S. Jiang,et al. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs[J]. journal of alloys and compounds,2016,681:522-526. |
| APA | J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&G.T. Du.(2016).Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs.journal of alloys and compounds,681,522-526. |
| MLA | J. Yang,et al."Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs".journal of alloys and compounds 681(2016):522-526. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。