Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
文献类型：期刊论文
| 作者 | J. Yang ; D. G. Zhao ; D. S. Jiang ; P. Chen ; Z. S. Liu ; J. J. Zhu ; X. J. Li ; X. G. He ; J. P. Liu ; L. Q. Zhang ; H. Yang ; Y. T. Zhang ; G. T. Du |
| 刊名 | optics express
 |
| 出版日期 | 2016 |
| 卷号 | 24期号:13页码:13824-13831 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27863]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | J. Yang,D. G. Zhao,D. S. Jiang,et al. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes[J]. optics express,2016,24(13):13824-13831. |
| APA | J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,Z. S. Liu.,...&G. T. Du.(2016).Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.optics express,24(13),13824-13831. |
| MLA | J. Yang,et al."Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes".optics express 24.13(2016):13824-13831. |
入库方式： OAI收割
来源：半导体研究所
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