Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC
文献类型：期刊论文
| 作者 | Feng Liang ; Ping Chen ; De-Gang Zhao ; De-Sheng Jiang ; Zhi-Juan Zhao ; Zong-Shun Liu ; Jian-Jun Zhu ; Jing Yang ; Wei Liu ; Xiao-Guang He ; Xiao-Jing Li ; Xiang Li ; Shuang-Tao Liu ; Hui Yang ; Li-Qun Zhang ; Jian-Ping Liu ; Yuan-Tao Zhang ; Guo-Tong Du |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2016 |
| 卷号 | 25期号:5页码:057703 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27872]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Feng Liang,Ping Chen,De-Gang Zhao,et al. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC[J]. Chinese Physics B,2016,25(5):057703. |
| APA | Feng Liang.,Ping Chen.,De-Gang Zhao.,De-Sheng Jiang.,Zhi-Juan Zhao.,...&Guo-Tong Du.(2016).Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC.Chinese Physics B,25(5),057703. |
| MLA | Feng Liang,et al."Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC".Chinese Physics B 25.5(2016):057703. |
入库方式： OAI收割
来源：半导体研究所
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