Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells
文献类型：期刊论文
| 作者 | Jinling Yuabd ; Shuying Chengbd ; Yunfeng Laib ; Qiao Zhengb ; Yonghai Chenc ; Jun Rena |
| 刊名 | physica e: low-dimensional systems and nanostructures
 |
| 出版日期 | 2016 |
| 卷号 | 81页码:240-247 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27675]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jinling Yuabd,Shuying Chengbd,Yunfeng Laib,et al. Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells[J]. physica e: low-dimensional systems and nanostructures,2016,81:240-247. |
| APA | Jinling Yuabd,Shuying Chengbd,Yunfeng Laib,Qiao Zhengb,Yonghai Chenc,&Jun Rena.(2016).Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells.physica e: low-dimensional systems and nanostructures,81,240-247. |
| MLA | Jinling Yuabd,et al."Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells".physica e: low-dimensional systems and nanostructures 81(2016):240-247. |
入库方式： OAI收割
来源：半导体研究所
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