Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
文献类型：期刊论文
| 作者 | Jinling Yu ; Xiaolin Zeng ; Shuying Cheng ; Yonghai Chen ; Yu Liu ; Yunfeng Lai ; Qiao Zheng ; Jun Ren |
| 刊名 | nanoscale res lett
 |
| 出版日期 | 2016 |
| 卷号 | 11期号:1页码:477 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27676]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jinling Yu,Xiaolin Zeng,Shuying Cheng,et al. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells[J]. nanoscale res lett,2016,11(1):477. |
| APA | Jinling Yu.,Xiaolin Zeng.,Shuying Cheng.,Yonghai Chen.,Yu Liu.,...&Jun Ren.(2016).Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.nanoscale res lett,11(1),477. |
| MLA | Jinling Yu,et al."Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells".nanoscale res lett 11.1(2016):477. |
入库方式： OAI收割
来源：半导体研究所
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