Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers
文献类型：期刊论文
| 作者 | Yanhua Zhang ; Wenquan Ma ; Jianliang Huang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Chengcheng Zhao ; Haiming Ji ; Tao Yang |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2016 |
| 卷号 | 37期号:9页码:1166 - 1169 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27718]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yanhua Zhang,Wenquan Ma,Jianliang Huang,et al. Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers[J]. IEEE Electron Device Letters,2016,37(9):1166 - 1169. |
| APA | Yanhua Zhang.,Wenquan Ma.,Jianliang Huang.,Yulian Cao.,Ke Liu.,...&Tao Yang.(2016).Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers.IEEE Electron Device Letters,37(9),1166 - 1169. |
| MLA | Yanhua Zhang,et al."Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers".IEEE Electron Device Letters 37.9(2016):1166 - 1169. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。