The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs
文献类型：期刊论文
| 作者 | Xiangting Kong ; Renrong Liang ; Xuliang Zhou ; Shiyan Li ; Mengqi Wang ; Honggang Liu ; Jing Wang ; Wei Wang ; Jiaoqing Pan |
| 刊名 | IEEE Transactions on Electron Devices
 |
| 出版日期 | 2016 |
| 卷号 | 63期号:8页码:3084-3087 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27733]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiangting Kong,Renrong Liang,Xuliang Zhou,et al. The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs[J]. IEEE Transactions on Electron Devices,2016,63(8):3084-3087. |
| APA | Xiangting Kong.,Renrong Liang.,Xuliang Zhou.,Shiyan Li.,Mengqi Wang.,...&Jiaoqing Pan.(2016).The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs.IEEE Transactions on Electron Devices,63(8),3084-3087. |
| MLA | Xiangting Kong,et al."The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs".IEEE Transactions on Electron Devices 63.8(2016):3084-3087. |
入库方式： OAI收割
来源：半导体研究所
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