Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition
文献类型：期刊论文
| 作者 | Li-Xin Tian ; Feng Zhang ; Zhan-Wei Shen ; Guo-Guo Yan ; Xing-Fang Liu ; Wan-Shun Zhao ; Lei Wang ; Guo-Sheng Sun ; Yi-Ping Zeng |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2016 |
| 卷号 | 25期号:12页码:128104 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27755]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li-Xin Tian,Feng Zhang,Zhan-Wei Shen,et al. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition[J]. Chinese Physics B,2016,25(12):128104. |
| APA | Li-Xin Tian.,Feng Zhang.,Zhan-Wei Shen.,Guo-Guo Yan.,Xing-Fang Liu.,...&Yi-Ping Zeng.(2016).Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition.Chinese Physics B,25(12),128104. |
| MLA | Li-Xin Tian,et al."Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition".Chinese Physics B 25.12(2016):128104. |
入库方式： OAI收割
来源：半导体研究所
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