中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

文献类型:期刊论文

作者H.L. Kang ; J.B. Lao ; Z.P. Li ; W.Q. Yao ; C. Liu ; J.Y. Wang
刊名applied surface science
出版日期2016
卷号388页码:584-588
学科主题半导体材料
收录类别SCI
公开日期2017-03-10
源URL[http://ir.semi.ac.cn/handle/172111/27756]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
H.L. Kang,J.B. Lao,Z.P. Li,et al. Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles[J]. applied surface science,2016,388:584-588.
APA H.L. Kang,J.B. Lao,Z.P. Li,W.Q. Yao,C. Liu,&J.Y. Wang.(2016).Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles.applied surface science,388,584-588.
MLA H.L. Kang,et al."Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles".applied surface science 388(2016):584-588.

入库方式: OAI收割

来源:半导体研究所

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