Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases
文献类型：期刊论文
| 作者 | Junda Yan ; Quan Wang ; Xiaoliang Wang ; Chun Feng ; Hongling Xiao ; Shiming Liu ; Jiamin Gong ; Fengqi Liu ; Baiquan Li |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2016 |
| 卷号 | 120期号:12页码:124501 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27764]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Junda Yan,Quan Wang,Xiaoliang Wang,et al. Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases[J]. journal of applied physics,2016,120(12):124501. |
| APA | Junda Yan.,Quan Wang.,Xiaoliang Wang.,Chun Feng.,Hongling Xiao.,...&Baiquan Li.(2016).Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases.journal of applied physics,120(12),124501. |
| MLA | Junda Yan,et al."Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases".journal of applied physics 120.12(2016):124501. |
入库方式： OAI收割
来源：半导体研究所
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