Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission
文献类型：期刊论文
| 作者 | Xiang Chen ; Jianchang Yan ; Yun Zhang ; Yingdong Tian ; Yanan Guo ; Shuo Zhang ; Tongbo Wei ; Junxi Wang ; Jin Min Li |
| 刊名 | ieee photonics journal
 |
| 出版日期 | 2016 |
| 卷号 | 8期号:5页码:2300211 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28081]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Xiang Chen,Jianchang Yan,Yun Zhang,et al. Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission[J]. ieee photonics journal,2016,8(5):2300211. |
| APA | Xiang Chen.,Jianchang Yan.,Yun Zhang.,Yingdong Tian.,Yanan Guo.,...&Jin Min Li.(2016).Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission.ieee photonics journal,8(5),2300211. |
| MLA | Xiang Chen,et al."Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission".ieee photonics journal 8.5(2016):2300211. |
入库方式： OAI收割
来源：半导体研究所
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