High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route
文献类型：期刊论文
| 作者 | Liancheng Wang ; Enqing Guo ; Zhiqiang Liu ; Xiaoyan Yi ; Guohong Wang |
| 刊名 | ieee transactions on electron devices
 |
| 出版日期 | 2016 |
| 卷号 | 63期号:3页码:892-902 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28086]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Liancheng Wang,Enqing Guo,Zhiqiang Liu,et al. High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route[J]. ieee transactions on electron devices,2016,63(3):892-902. |
| APA | Liancheng Wang,Enqing Guo,Zhiqiang Liu,Xiaoyan Yi,&Guohong Wang.(2016).High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route.ieee transactions on electron devices,63(3),892-902. |
| MLA | Liancheng Wang,et al."High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route".ieee transactions on electron devices 63.3(2016):892-902. |
入库方式： OAI收割
来源：半导体研究所
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