Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides
文献类型：期刊论文
| 作者 | Zhiqiang Liu ; Yang Huang ; Xiaoyan Yi ; Binglei Fu ; Guodong Yuan ; Junxi Wang ; Jinmin Li ; Yong Zhang |
| 刊名 | scientific reports
 |
| 出版日期 | 2016 |
| 卷号 | 6页码:32033 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28092]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhiqiang Liu,Yang Huang,Xiaoyan Yi,et al. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides[J]. scientific reports,2016,6:32033. |
| APA | Zhiqiang Liu.,Yang Huang.,Xiaoyan Yi.,Binglei Fu.,Guodong Yuan.,...&Yong Zhang.(2016).Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.scientific reports,6,32033. |
| MLA | Zhiqiang Liu,et al."Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides".scientific reports 6(2016):32033. |
入库方式： OAI收割
来源：半导体研究所
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