中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

文献类型:期刊论文

作者Hongjian Li ; Panpan Li ; Junjie Kang ; Jiianfeng Ding ; Jun Ma ; Yiyun Zhang ; Xiaoyan Yi ; Guohong Wang
刊名scientific reports
出版日期2016
卷号6页码:35217
学科主题半导体器件
收录类别SCI
公开日期2017-03-16
源URL[http://ir.semi.ac.cn/handle/172111/28095]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Hongjian Li,Panpan Li,Junjie Kang,et al. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots[J]. scientific reports,2016,6:35217.
APA Hongjian Li.,Panpan Li.,Junjie Kang.,Jiianfeng Ding.,Jun Ma.,...&Guohong Wang.(2016).Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots.scientific reports,6,35217.
MLA Hongjian Li,et al."Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots".scientific reports 6(2016):35217.

入库方式: OAI收割

来源:半导体研究所

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