High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Shuo Zhang ; Ping Ma ; Boting Liu ; Dongxue Wu ; Yuliang Huang ; Junxi Wang ; Jinmin Li |
| 刊名 | aip advances
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:6页码:065301 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28108]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Shuo Zhang,Ping Ma,Boting Liu,et al. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition[J]. aip advances,2016,6(6):065301. |
| APA | Shuo Zhang.,Ping Ma.,Boting Liu.,Dongxue Wu.,Yuliang Huang.,...&Jinmin Li.(2016).High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition.aip advances,6(6),065301. |
| MLA | Shuo Zhang,et al."High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition".aip advances 6.6(2016):065301. |
入库方式： OAI收割
来源：半导体研究所
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