Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Peng Ren ; Gang Han ; Bing-Lei Fu ; Bin Xue ; Ning Zhang ; Zhe Liu ; Li-Xia Zhao ; Jun-Xi Wang ; Jin-Min Li |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2016 |
| 卷号 | 33期号:6页码:068101 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2017-03-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28116]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Peng Ren,Gang Han,Bing-Lei Fu,et al. Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition[J]. chinese physics letters,2016,33(6):068101. |
| APA | Peng Ren.,Gang Han.,Bing-Lei Fu.,Bin Xue.,Ning Zhang.,...&Jin-Min Li.(2016).Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition.chinese physics letters,33(6),068101. |
| MLA | Peng Ren,et al."Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition".chinese physics letters 33.6(2016):068101. |
入库方式： OAI收割
来源：半导体研究所
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