Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets
文献类型:期刊论文
作者 | Yingdong Tian ; Yun Zhang ; Jianchang Yan ; Xiang Chen ; Junxi Wang ; Jinmin Li |
刊名 | RSC Advances
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出版日期 | 2016 |
卷号 | 6期号:55页码:50245-50249 |
学科主题 | 半导体器件 |
收录类别 | SCI |
公开日期 | 2017-03-16 |
源URL | [http://ir.semi.ac.cn/handle/172111/28117] ![]() |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Yingdong Tian,Yun Zhang,Jianchang Yan,et al. Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets[J]. RSC Advances,2016,6(55):50245-50249. |
APA | Yingdong Tian,Yun Zhang,Jianchang Yan,Xiang Chen,Junxi Wang,&Jinmin Li.(2016).Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets.RSC Advances,6(55),50245-50249. |
MLA | Yingdong Tian,et al."Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets".RSC Advances 6.55(2016):50245-50249. |
入库方式: OAI收割
来源:半导体研究所
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