中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

文献类型:期刊论文

作者Yingdong Tian ; Yun Zhang ; Jianchang Yan ; Xiang Chen ; Junxi Wang ; Jinmin Li
刊名RSC Advances
出版日期2016
卷号6期号:55页码:50245-50249
学科主题半导体器件
收录类别SCI
公开日期2017-03-16
源URL[http://ir.semi.ac.cn/handle/172111/28117]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Yingdong Tian,Yun Zhang,Jianchang Yan,et al. Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets[J]. RSC Advances,2016,6(55):50245-50249.
APA Yingdong Tian,Yun Zhang,Jianchang Yan,Xiang Chen,Junxi Wang,&Jinmin Li.(2016).Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets.RSC Advances,6(55),50245-50249.
MLA Yingdong Tian,et al."Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets".RSC Advances 6.55(2016):50245-50249.

入库方式: OAI收割

来源:半导体研究所

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