Enhanced third harmonic generation in a silicon metasurface using trapped mode
文献类型：期刊论文
| 作者 | Tong, Wenyuan1; Gong, Cheng2; Liu, Xiaojun2; Yuan, Shuai1; Huang, Qingzhong1; Xia, Jinsong1; Wang, Yi1 |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2016-08-22 |
| 卷号 | 24期号:17页码:19661-19670 |
| 英文摘要 | We experimentally demonstrate enhanced third harmonic generation (THG) using a silicon metasurface, which is consist of symmetric spindle-shape nanoparticle array. Relying on the trapped mode supported by the high quality factor all-dielectric metasurface, the conversion efficiency of THG is about 300 times larger than that of bulk silicon slab. The maximum extinction ratio of the intensity of THG reaches about 25 dB by tuning the polarization of incident light. The simulation results agree with the experimental performances. (C) 2016 Optical Society of America |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Optics |
| 研究领域[WOS] | Optics |
| 关键词[WOS] | STRONG MAGNETIC RESPONSE ; 3RD-HARMONIC GENERATION ; DIELECTRIC METAMATERIAL ; FREQUENCY-GENERATION ; FANO RESONANCE ; WAVE-GUIDES ; NANOPARTICLES ; NANOCAVITIES ; REGION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000385227100079 |
| 源URL | [http://ir.wipm.ac.cn/handle/112942/9943]  |
| 专题 | 武汉物理与数学研究所_原子分子光物理研究部 |
| 作者单位 | 1.Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China 2.Chinese Acad Sci, Wuhan Inst Phys & Math, Key Lab Atom Frequency Stand, Wuhan 430071, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tong, Wenyuan,Gong, Cheng,Liu, Xiaojun,et al. Enhanced third harmonic generation in a silicon metasurface using trapped mode[J]. OPTICS EXPRESS,2016,24(17):19661-19670. |
| APA | Tong, Wenyuan.,Gong, Cheng.,Liu, Xiaojun.,Yuan, Shuai.,Huang, Qingzhong.,...&Wang, Yi.(2016).Enhanced third harmonic generation in a silicon metasurface using trapped mode.OPTICS EXPRESS,24(17),19661-19670. |
| MLA | Tong, Wenyuan,et al."Enhanced third harmonic generation in a silicon metasurface using trapped mode".OPTICS EXPRESS 24.17(2016):19661-19670. |
入库方式： OAI收割
来源：武汉物理与数学研究所
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