Numerical analysis of the surface-conduction electron-emitter with a new configuration
文献类型:期刊论文
作者 | Shen, Zhihua1; Wang, Xiao1; Wu, Shengli1; Tian, Jinshou2![]() |
刊名 | modern physics letters b
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出版日期 | 2016-04-20 |
卷号 | 30期号:10 |
关键词 | Surface-conduction electron-emitter finite integration technique |
ISSN号 | 0217-9849 |
产权排序 | 2 |
英文摘要 | a new kind of surface -conduction electron -emitter (sce) with a triangular dielectric layer under the conductive film is proposed. the influences of the vertex angle (theta) of the triangular dielectric layer and the anode voltage (u-a) on the electron emission efficiency and the focusing capability have been investigated with the finite integration technique (fit). the numerical simulation results show that sce with a small vertex angle guarantees higher electron emission efficiency even with a low anode voltage. but the focusing capability of the electron emitter will get worse when the theta or u-a becomes too small. take both the electron emission efficiency and focusing capability into consideration, the structure with a vertex angle (theta) between 60 degrees-100 degrees and the anode voltage of 1500 v is suggested. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000374854600012 |
源URL | [http://ir.opt.ac.cn/handle/181661/28657] ![]() |
专题 | 条纹相机工程中心 |
作者单位 | 1.Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China 2.Xian Inst Opt & Precis Mech CAS, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China |
推荐引用方式 GB/T 7714 | Shen, Zhihua,Wang, Xiao,Wu, Shengli,et al. Numerical analysis of the surface-conduction electron-emitter with a new configuration[J]. modern physics letters b,2016,30(10). |
APA | Shen, Zhihua,Wang, Xiao,Wu, Shengli,&Tian, Jinshou.(2016).Numerical analysis of the surface-conduction electron-emitter with a new configuration.modern physics letters b,30(10). |
MLA | Shen, Zhihua,et al."Numerical analysis of the surface-conduction electron-emitter with a new configuration".modern physics letters b 30.10(2016). |
入库方式: OAI收割
来源:西安光学精密机械研究所
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