中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study

文献类型:期刊论文

作者Yang, JH; Shi, L(石林); Wang, LW; Wei, SH
刊名SCIENTIFIC REPORTS
出版日期2016
卷号6
通讯作者Wei, SH
英文摘要Non-radiative recombination plays an important role in the performance of optoelectronic semiconductor devices such as solar cells and light-emitting diodes. Most textbook examples assume that the recombination process occurs through a single defect level, where one electron and one hole are captured and recombined. Based on this simple picture, conventional wisdom is that only defect levels near the center of the bandgap can be effective recombination centers. Here, we present a new two-level recombination mechanism: first, one type of carrier is captured through a defect level forming a metastable state; then the local defect configuration rapidly changes to a stable state, where the other type of carrier is captured and recombined through another defect level. This novel mechanism is applied to the recombination center Te-cd(2+) in CdTe. We show that this two-level process can significantly increase the recombination rate (by three orders of magnitude) in agreement with experiments. We expect that this two-level recombination process can exist in a wide range of semiconductors, so its effect should be carefully examined in characterizing optoelectronic materials.
关键词[WOS]TOTAL-ENERGY CALCULATIONS ; WAVE BASIS-SET ; MULTIPHONON TRANSITIONS ; COUPLING SCHEME ; SEMICONDUCTORS
收录类别SCI
语种英语
WOS记录号WOS:000370231900001
源URL[http://ir.sinano.ac.cn/handle/332007/4594]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式
GB/T 7714
Yang, JH,Shi, L,Wang, LW,et al. Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study[J]. SCIENTIFIC REPORTS,2016,6.
APA Yang, JH,Shi, L,Wang, LW,&Wei, SH.(2016).Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study.SCIENTIFIC REPORTS,6.
MLA Yang, JH,et al."Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study".SCIENTIFIC REPORTS 6(2016).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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