Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation
文献类型：期刊论文
| 作者 | Wang, XD; Mo, YJ; Zeng, XH(曾雄辉); Mao, HM; Wang, JF(王建峰); Xu, K(徐科) |
| 刊名 | CHINESE OPTICS LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 14期号:5 |
| 通讯作者 | Wang, XD ; Zeng, XH(曾雄辉) |
| 英文摘要 | Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1 x 10(13), 1 x 10(14), 1 x 10(15), and 5 x 10(15) atom/cm(2), respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1 x 10(15) atom/cm(2) implanted GaN annealed at 1100 degrees C. Luminescence peaks at 356, 362, 376, 390, and 414 nm are observed on the 82 K cathodoluminescence spectrum. When the temperature is increased to 150 K, the intensities of the 356 and 414 nm peaks are nearly unchanged and the 362, 376, and 390 nm peaks disappear. The intensity ratio of 538 nm (H-2(11/2) -> I-4(15/2)) and 559 nm (S-4(3/2) -> I-4(15/2)) is increased with the increase in temperature. We try to shed light on the above interesting phenomena. |
| 关键词[WOS] | LUMINESCENCE ; NITRIDE ; LAYERS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000375921000016 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4660]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Wang, XD,Mo, YJ,Zeng, XH,et al. Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation[J]. CHINESE OPTICS LETTERS,2016,14(5). |
| APA | Wang, XD,Mo, YJ,Zeng, XH,Mao, HM,Wang, JF,&Xu, K.(2016).Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation.CHINESE OPTICS LETTERS,14(5). |
| MLA | Wang, XD,et al."Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation".CHINESE OPTICS LETTERS 14.5(2016). |
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